Mainly used for high-power RF devices such as RF amplifiers and microwave amplifiers, high-power devices such as laser tube diodes, laser tube diode arrays, high-power transistors, as well as compound semiconductor devices such as GaN, GaA, SiC, etc.
It has the characteristics of high mechanical strength, good insulation, low dielectric constant, and light weight. Its room temperature thermal conductivity is more than 5 times that of copper, which can enable semiconductor devices to achieve higher power density and improve reliability in a smaller space. It is the best thermal management material for heat dissipation of high heat flux density devices.
| Size | 1-6inches，Customizable |
| Thickness | 0.25-1mm，Customizable |
| Roughness | ＜10nm |
| Thickness deviation | ±0.03 mm |
| Thermal conductivity | 1000-2200W/(m·K)@25℃ |
| Coefficient of thermal expansion | 1±0.1ppm/K@25℃ |
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