Mainly used for ICP etching process of epitaxial thin film materials (GaN, SiO2, etc.) for LED wafer chips, precision ceramic parts for semiconductor diffusion, and MOCVD epitaxial process for semiconductor wafers.
Adopting high-purity pressureless sintered silicon carbide ceramic material, it has the characteristics of high hardness, corrosion resistance, wear resistance, long service life, etc., and the product has high precision and good etching uniformity of the wafer epitaxial layer. Diameter range: 50~500mm, tray thickness: 3~20mm, can design and manufacture various non-standard products.
0371-55983628
sinomach-dia@diamondgroup.cn
