Semiconductor Wafer Dicing Blade
Mainly used for efficient and precise cutting of semiconductor wafers such as silicon wafers, compound semiconductor wafers (SiC, GaAs, GaP, etc.), oxide semiconductor wafers (LiTaO3, etc.), etc., to achieve chip haplochromatization.
The edge part is prepared using precision electroform technology, with a blade thickness range of 10 μm~100 μm and a micro powder particle size range of 1500 #~5000 #.
Having 6 levels of abrasive particle concentration, suitable for a wider range of wafer types; Has excellent versatility and can adapt to cutting requirements in various complex scenarios, including cutting paths containing metals, Pl/PO, and other working conditions; In environments where cutting water contains CO2, it exhibits excellent corrosion resistance; When cutting ultra thick wafers (such as wafer level packaged chips), the groove shape can maintain a stable vertical state.
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